Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8045228 | Vacuum | 2014 | 17 Pages |
Abstract
Si quantum dots (Si-QDs)/SiO2 multilayer films have been fabricated on Si substrate, and the carrier transport properties of heterojunctions consisting of Al:Si/SiO2:Si:Al are studied. The current density-voltage curves show that high density Si-QDs lead to higher current density and rectifying ratio. The carrier transports in the forward voltage are controlled by Ohmic resistance model, tunneling and recombination limited current (TRLC) model, and space-charge limited current (SCLC) model, respectively. The TRLC is quenched by hydrogen passivation, while the SCLC-limited carrier transport process becomes the main carrier transport mechanism, and a 7.6 times current density enhancement is obtained. It suggests that the SCLC-limited model is more effective for carrier transport in the studied device.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Xinzhan Wang, Wei Yu, Huina Feng, Xiang Yu, Jin Wang, Xiaoyun Teng, Wanbing Lu, Guangsheng Fu,