| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8045380 | Vacuum | 2013 | 5 Pages |
Abstract
⺠In pulsed sputtering, target voltage during pulse-off period was modified. ⺠Dense Cu film structure was obtained with positive pulse-off target voltage. ⺠The positive pulse-off voltage raised the potential of afterglow plasma. ⺠With this, incidence energy of ions from the plasma was suggested to be increased. ⺠The method can be used to prepare fine film structure without substrate bias.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Takeo Nakano, Norihiko Hirukawa, Shuhei Saeki, Shigeru Baba,