| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8045386 | Vacuum | 2013 | 5 Pages |
Abstract
⺠The EAE technique is a new deposition method of thin silicon films. ⺠The EAE technique allows control the deposition rate independently on electrodes. ⺠With the EAE discharge two conditions of the plasma are combined: low ion energy and a high density of electrons. ⺠With EAE technique better deposited films uniformity is achieved. ⺠With EAE technique the deposition rate of thin silicon films increased without quality drop.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
D. Hrunski, F. Mootz, A. Zeuner, A. Janssen, H. Rost, R. Beckmann, S. Binder, E. Schüngel, S. Mohr, D. Luggenhölscher, U. Czarnetzki, G. Grabosch,