| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8045416 | Vacuum | 2013 | 5 Pages |
Abstract
⺠Characteristic of N2 plasma etch damage to n-GaN was compared with that for Ar. ⺠n-GaN etch damage characteristics for N2 and Ar plasmas are different. ⺠N2 plasma etch damage occurs independent of gas pressure. ⺠Although UV is emitted from N2, physical etch effect contributes to the damage. ⺠The surface morphology for N2 does not change from that of the as-grown sample.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Retsuo Kawakami, Atsushi Takeichi, Masahito Niibe, Masashi Konishi, Yuta Mori, Takuya Kotaka, Takeshi Inaoka, Kikuo Tominaga, Takashi Mukai,