| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8045427 | Vacuum | 2013 | 5 Pages |
Abstract
⺠Electrical performance and thermal stability of AlGaN/GaN HFETs with TiN gate is presented. ⺠TiN-gate AlGaN/GaN HFETs is stable at 600 °C for 1 hour or 850 °C for several minutes. ⺠We noticed that the sheet resistance of the TiN films increased after thermal treatment. ⺠TiN-gate AlGaN/GaN HFET is a candidate for a gate material enduring high-temperature process.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Jin-Ping Ao, Yoshiki Naoi, Yasuo Ohno,