BB-coefficient in n-type GaAs

Recombination and absorption measurements performed on double heterostructure films grown by metalorganic chemical vapor deposition are used to deduce BB, the coefficient of radiative recombination for n-type GaAs with electron concentrations (n0n0) from 1.3×10171.3×1017 to 3.8×1018cm-3. The radiative and non-radiative components of recombination were separated and the effects of photon recycling were taken into account. It is found that B=3.5×10-10cm3/s for low n0n0, and that BB decreases significantly with increasing n0n0 to as low as B=1.8×10-10cm3/s for n0=3.8×1018cm-3.