Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
80488 | Solar Energy Materials and Solar Cells | 2009 | 4 Pages |
Abstract
The authors report on the correlation of the oxygen content for three high growth-rate series of thin Si films crossing the boundary between amorphous and microcrystalline growth together with the evolution of the prefactor and the activation energy of the dark d.c. conductivity. The different roles of oxygen, such as doping, alloying or defect passivation, are discussed in the framework of the model of transport based on the formation of large grain boundaries with an increased band gap due to hydrogen and/or oxygen alloying.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
J. Kočka, H. Stuchlíková, M. Ledinský, J. Stuchlík, T. Mates, A. Fejfar,