Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
80539 | Solar Energy Materials and Solar Cells | 2006 | 10 Pages |
Abstract
The results of numerical device simulations for p–i–n diodes and the closed-form expression of the current–voltage characteristics developed for p–n diodes are compared. It is shown that the closed-form expression correctly predicts the functional relationship between material parameters and device performance of p–i–n diodes. The ideality factor between 1 and 2 is analyzed in detail. The effect of the defect density, the intrinsic carrier concentration, the mobility and the built-in potential on device performance are demonstrated. These insights are applied to analyze microcrystalline silicon thin-film solar cells deposited by chemical vapor deposition at temperatures below 250 °C.
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Authors
T. Brammer, H. Stiebig,