| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 80596 | Solar Energy Materials and Solar Cells | 2006 | 7 Pages |
Abstract
The electrical properties of micrometre-sized inversion-layer (IL) emitters in crystalline Si are investigated by measuring their current–voltage characteristics using a so-called NOSFET device. The IL emitter is induced by a SiN/SiO double-layer stack. We show that by scanning the surface with a negatively biased tip, the IL emitter below the tip can be controllably eliminated.
Keywords
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
Johnny E. Wu, Armin G. Aberle,