Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
80774 | Solar Energy Materials and Solar Cells | 2008 | 9 Pages |
Abstract
Heterojunction with intrinsic thin layer (HIT) solar cells fabricated on p-type silicon substrates usually demonstrate inferior performance than those formed on n-type substrates. The influence of various structure parameters on the performance of the c-Si(p)-based bifacial HIT solar cell, i.e., the TCO/a-Si:H(n)/a-Si:H(i)/c-Si(p)/a-Si:H(i)/a-Si:H(p+)/TCO solar cell, was investigated in detail by computer simulation using the AFORS-HET software. The work function of the transparent conductive oxide was found to be a key factor to affect the solar cell performance. Detailed influence mechanisms were analysed. Accordingly, the design optimization of the bifacial HIT solar cells on c-Si(p) substrates was provided.
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Authors
L. Zhao, C.L. Zhou, H.L. Li, H.W. Diao, W.J. Wang,