| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 80961 | Solar Energy Materials and Solar Cells | 2007 | 6 Pages |
Abstract
Effects of post formation thermal annealing of the CdTe–CdS device on the inter-diffusion of S and Te at the junction in a substrate configuration device have been studied by Auger electron spectroscopy. While the migration of S and Te atoms increases with annealing temperature, the extent of S diffusion is always higher than the diffusion of Te atoms. Inter-diffusion of S and Te causes the formation of CdTe1-xSxCdTe1-xSx ternary compound at the CdTe–CdS interface.
Keywords
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
J. Pantoja Enríquez, E. Gómez Barojas, R. Silva González, U. Pal,