Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
81121 | Solar Energy Materials and Solar Cells | 2007 | 6 Pages |
Abstract
We studied commercial multicrystalline silicon (mc-Si) wafers having wire sawing-related defects on their surfaces. SiC and Si3N4 inclusions were identified in these defected areas, and they were highly localized. SiC inclusions were present in the form of clusters embedded in mc-Si wafer. These inclusions introduced a stress concentration into mc-Si wafer. The wire sawing-related defects on the wafer surfaces are arrays of sawing ridges. SiC inclusions were the main cause for these sawing ridges, while the effect of Si3N4 was not notable. A model was proposed to explain the formation of the sawing ridges on the surfaces of mc-Si wafers.
Related Topics
Physical Sciences and Engineering
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Authors
Guoping Du, Lang Zhou, Pietro Rossetto, Yuepeng Wan,