Growth and properties of single-phase γ-In2Se3 thin films on (1 1 1) Si substrate by AP-MOCVD using H2Se precursor

A set of In2Se3 films was grown on (1 1 1) Si substrate with AlN buffer by metalorganic chemical vapor deposition (MOCVD) using H2Se as the metalogramic precursors for Se. The In2Se3 films on (1 1 1) Si substrate were pinhole-free with homogeneous and lamellar structures. It was found that by properly controlling the substrate temperatures, single-phase γ-In2Se3 films with fairly good optical properties can be well fabricated. Photoluminescence spectra of single-phase γ-In2Se3 show exciton emissions at 2.140 eV at 10 K. The band gap of single-phase γ-In2Se3 at room temperature is estimated at 1.943 eV.