Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
81134 | Solar Energy Materials and Solar Cells | 2007 | 5 Pages |
Abstract
CdO/c-Si solar cells have been made by depositing CdO thin films on p-type monocrystalline silicon substrate by means of the rapid thermal oxidation (RTO) technique using a halogen lamp at 350 °C/45 s in static air. Results on structural, optical, and electrical properties of grown CdO films are reported. The electrical and photovoltaic properties of CdO/Si solar cells are examined. Under AM1 illumination condition, the cell shows an open circuit voltage (VOC) of 500 mV, a short circuit current density (JSC) of 27.5 mA/cm2, a fill factor (FF) of 60%, and a conversion efficiency (η) of 8.84% without using frontal grid contacts and/or post-deposition annealing. Furthermore, the stability of solar cells characteristics is tested.
Keywords
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
Raid A. Ismail, Omar A. Abdulrazaq,