Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
81238 | Solar Energy Materials and Solar Cells | 2006 | 12 Pages |
Abstract
Here we investigated the effects of hydrogen treatment on highly defected polycrystalline silicon solar cells in terms of defects passivation and surface etching. The poly-Si films were formed by high-temperature chemical vapour deposition. The hydrogen treatment was carried out through deposition of a-SiNx:H layer followed by a thermal treatment or by direct hydrogen plasma. The deposition of silicon nitride layers on polysilicon cells led to a slight increase in the open-circuit voltage without damage to the surface. In contrast, after plasma hydrogenation, the results revealed an etching process of the emitter simultaneously with an important increase of the measured open-circuit voltage by a factor 2, reaching 420 mV.
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Authors
A. Slaoui, E. Pihan, I. Ka, N.A. Mbow, S. Roques, J.M. Koebel,