Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
81239 | Solar Energy Materials and Solar Cells | 2006 | 8 Pages |
Abstract
The purification of upgraded metallurgical silicon by extraction of boron and phosphorus was experimentally demonstrated using concentrated solar radiation in the temperature range 1550–1700 °C. The process operated with a flow of Ar at reduced pressure (0.05 atm) for elimination of P, and with a flow of H2O for elimination of B. Impurity content decreased by a factor of 3 after a 50-min solar treatment, yielding Si samples with final average content of 2.1 ppmw B and 3.2 ppmw P.
Keywords
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Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
G. Flamant, V. Kurtcuoglu, J. Murray, A. Steinfeld,