Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
813373 | Materials Today | 2008 | 7 Pages |
Abstract
The combination of extreme electronic and thermal properties found in synthetic diamond produced by chemical vapor deposition (CVD) is raising considerable excitement over its potential use as a semiconductor material. Experimental studies have demonstrated charge-carrier mobilities1 of >3000 cm2V−1s−1 and thermal conductivities2 >2000 Wm−1K−1. The material has been predicted to have a breakdown field strength in excess of 10 MVcm−1. These figures suggest that, providing a range of technical challenges can be overcome, diamond would be particularly well suited to operation as a semiconductor material wherever high frequencies, high powers, high temperatures or high voltages are required.
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Authors
Chris J.H. Wort, Richard S. Balmer,