| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 814384 | Materials Today | 2006 | 6 Pages |
Abstract
Complementary metal-oxide-semiconductor (CMOS) transistor scaling will continue for at least another decade. However, innovation in transistor structures and integration of novel materials are needed to sustain this performance trend. Here we discuss the challenges and opportunities of transistor scaling for the next five to ten years.
Related Topics
Physical Sciences and Engineering
Chemistry
Chemistry (General)
Authors
Meikei Ieong, Vijay Narayanan, Dinkar Singh, Anna Topol, Victor Chan, Zhibin Ren,