Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8145572 | Infrared Physics & Technology | 2018 | 7 Pages |
Abstract
This paper presents a comparison of three nondestructive and contactless techniques used for determination of recombination parameters of silicon samples. They are: photoacoustic method, modulated free carriers absorption method and the photothermal radiometry method. In the paper the experimental set-ups used for measurements of the recombination parameters in these methods as also theoretical models used for interpretation of obtained experimental data have been presented and described. The experimental results and their respective fits obtained with these nondestructive techniques are shown and discussed. The values of the recombination parameters obtained with these methods are also presented and compared. Main advantages and disadvantages of presented methods have been discussed.
Related Topics
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Authors
Å. Chrobak, M. MaliÅski,