| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8145846 | Infrared Physics & Technology | 2018 | 33 Pages |
Abstract
Dry etching techniques with minimal etch induced damage are required to develop highly anisotropic etch for pixel delineation of HgCdTe infrared focal plane arrays (IRFPAs). High density plasma process has become the main etching technique for HgCdTe in the past twenty years, In this paper, high density plasma electron cyclotron resonance (ECR) and inductively coupled plasma (ICP) etching of HgCdTe are summarized. Common plasma-etch-process induced type conversion and related mechanisms are reviewed particularly.
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Related Topics
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Atomic and Molecular Physics, and Optics
Authors
Lingfeng Liu, Yiyu Chen, Zhenhua Ye, Ruijun Ding,