Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8146165 | Infrared Physics & Technology | 2016 | 5 Pages |
Abstract
We have demonstrated 384 Ã 288 pixels mid-wavelength infrared focal plane arrays (FPA) using type II InAs/GaSb superlattice (T2SL) photodetectors with pitch of 25 μm. Two p-i-n T2SL samples were grown by molecular beam epitaxy with both GaAs-like and InSb-like interface. The diode chips were realized by pixel isolation with both dry etching and wet etching method, and passivation with SiNx layer. The device one with 50% cutoff wavelength of 4.1 μm shows NETD â¼Â 18 mK from 77 K to 100 K. The NETD of the other device with 50% cutoff wavelength at 5.6 μm is 10 mK at 77 K. Finally, the T2SL FPA shows high quality imaging capability at the temperature ranging from 80 K to 100 K which demonstrates the devices' good temperature performance.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Atomic and Molecular Physics, and Optics
Authors
Xuchang Zhou, Dongsheng Li, Jianliang Huang, Yanhua Zhang, Yingchun Mu, Wenquan Ma, Xiaoying Tie, Dafan Zuo,