Article ID Journal Published Year Pages File Type
8146255 Infrared Physics & Technology 2016 5 Pages PDF
Abstract
The process of GaSe native oxide formation was studied using atomic-force microscopy. It was found that the oxide film growth is accompanied by a work function increase. This increase saturates in several hours. The illumination by 1 mW laser at 650 nm stimulates the oxidation process. Continuous illumination changes the work function by 1 eV and that is 2 times higher than that without irradiation. It is supposed that the oxide formation occurs at edge dislocation lines.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Atomic and Molecular Physics, and Optics
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