| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8146473 | Infrared Physics & Technology | 2016 | 6 Pages |
Abstract
The dark current of separate absorption grading charge multiplication (SAGCM) InGaAs/InP avalanche photodiodes has been numerical analyzed. SRH current, TAT current, BBT current and avalanche amplification combined together as the dark current have been extracted by simulation separately. The trend of punch-through voltage and breakdown voltage have been discussed, meanwhile the influence of structure parameters also has been investigated.
Related Topics
Physical Sciences and Engineering
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Atomic and Molecular Physics, and Optics
Authors
Jiao Xu, Xiaoshuang Chen, Wenjuan Wang, Wei Lu,