| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8146487 | Infrared Physics & Technology | 2016 | 7 Pages |
Abstract
AlxGa1âxN epilayers, grown on c-plane oriented sapphire substrates by metal organic chemical vapour deposition (MOCVD), were evaluated using FTIR infrared reflectance spectroscopy. A peak at â¼850Â cmâ1 in the reflectance spectra, not reported before, was observed. Possible origins for this peak are considered and discussed.
Keywords
Related Topics
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Atomic and Molecular Physics, and Optics
Authors
G. Marx, J.A.A. Engelbrecht, M.E. Lee, M.C. Wagener, A. Henry,