Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8146849 | Infrared Physics & Technology | 2015 | 6 Pages |
Abstract
Metal-insulator-semiconductor structures based on n-Hg1âxCdxTe (x = 0.19-0.25) were grown by molecular-beam epitaxy on the GaAs (0 1 3) substrates. Near-surface graded-gap layers with high CdTe content were formed on both sides of the epitaxial HgCdTe. Admittance of these structures was studied experimentally in a wide temperature range (8-150) K. It is shown that an increase in the composition of the working layer and a decrease in temperature lead to a decrease in the frequency of transition to high-frequency behavior of the capacitance-voltage characteristics. The differential resistance of space charge region in the strong inversion increases with the composition of the working layer and for x = 0.22 and 0.25, the differential resistance is limited by the Shockley-Read generation. The values of the differential resistance of space charge region at different frequencies and temperatures were found.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Atomic and Molecular Physics, and Optics
Authors
A.V. Voitsekhovskii, S.N. Nesmelov, S.M. Dzyadukh, V.V. Vasil'ev, V.S. Varavin, S.A. Dvoretsky, N.N. Mikhailov, M.V. Yakushev,