Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8147035 | Infrared Physics & Technology | 2015 | 5 Pages |
Abstract
We report a substantial increase in the quality and photoluminescence (PL) emission efficiency of In(AsN) dilute nitride alloys grown on both p-type InAs and semi-insulting GaAs substrates, in response to rapid thermal annealing. At 4 K the PL emission efficiency increases by 25 times due to a reduction in non-radiative Shockley-Read-Hall recombination originating from elimination of point defects. For annealing temperatures up to 500 °C the activation energy for thermal quenching increases by a factor of three, with no change in the residual electron concentration and mobility. Temperature dependent PL, together with X-ray diffraction measurements, reveals an improvement in compositional uniformity. Our results are significant for photonic device applications and particularly for the development of cryogenic mid-infrared photodiodes, monolithic detectors and focal plane arrays.
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Authors
M. Kesaria, S. Birindelli, A.V. Velichko, Q.D. Zhuang, A. Patanè, M. Capizzi, A. Krier,