Detectivity dependence of quantum dot infrared photodetectors on temperature

The detectivity of Quantum dot infrared photodetectors (QDIPs) has always attracted a lot attention as a very important performance parameter. In the paper, based on the theoretical model for the detectivity with the consideration of the common influence of the microscale electron transport, the nanoscale electron transport and the self-consistent potential distribution of the electrons, the dependence of the detectivity of the QDIP on temperature is discussed by analyzing the influence of the temperature on the average electrons number in a quantum dot. Specifically, the average electrons number in a quantum dot shows different change trends (from the increase to decrease) with the increase of the temperature, but the detectivity presents the single decrease trend with the temperature, which can provide the designers with the theoretical guidance for the performance optimization of the QDIP devices.