Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8148350 | Journal of Crystal Growth | 2018 | 5 Pages |
Abstract
III-V compound semiconductors are promising channel materials for the future low-power and high-performance transistor because of their high electron/hole mobility. Here, we report on the integration of vertical InAs nanowire (NW)-channels on Si by selective-area metalorganic vapor phase epitaxy (MOVPE) with a pulse doping technique and demonstration of an InAs NW vertical surrounding-gate transistors. The device had a small subthreshold slope of 68â¯mV/decade, a normalized transconductance of 0.25â¯Î¼S/μm, and on/off ratio of around 107. The axial junction with the pulse doping effectively suppressed off-state leakage current resulting in good electrostatic gate control.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Hironori Gamo, Katsuhiro Tomioka,