Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8148353 | Journal of Crystal Growth | 2018 | 6 Pages |
Abstract
High quality monocrystalline indium oxide (In2O3) films have been epitaxially grown on SiO2 (0001) substrates by the metal-organic chemical vapor deposition (MOCVD) method. The influences of different growth temperatures on the structural, morphological and optoelectronic properties of the films were studied in detail. The film deposited at 650â¯Â°C exhibited the narrowest X-ray linewidth with an epitaxial relationship of In2O3 (1â¯1â¯1)â¥SiO2 (0001). The highest Hall mobility of 27.84â¯cm2â¯Vâ1â¯sâ1 with a minimum carrier concentration of 5.03â¯Ãâ¯1019â¯cmâ3 and a minimum resistivity of 4.24â¯Ãâ¯10â3â¯Î©â¯cm was obtained for the film prepared at 650â¯Â°C. The average transmittance for all the samples in the visible range exceeded 82% and the optical band gap of the films was calculated about 3.7â¯eV.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Xuejian Du, Baoyuan Man,