Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8148374 | Journal of Crystal Growth | 2018 | 5 Pages |
Abstract
We demonstrate a catalyst-free method to grow lateral InAs nanowires on GaAs (1â¯0â¯0) substrate by means of molecular beam epitaxy. By applying pre-surface treatment under oxygen plasma, lateral InAs nanowires with lengths of 1-2â¯Î¼m and width of approximately 30-80â¯nm are epitaxial grown along [11¯0] direction. Stacking faults are not observed in the epitaxial process, which is usually an issue for InAs nanowires grown vertically on (1â¯1â¯1) substrates. Photo-luminescent measurements were performed for both single and multiple layers of InAs nanowires. A spectrum peak at the wavelength of 1625â¯nm is observed for a single wire at 5â¯K and room temperature emission is obtained for three layers of InAs nanowires. In addition, InAsSb nanowires are achieved along [1â¯1â¯0] direction, with a length of 0.4-0.8â¯Î¼m and a width of 60-80â¯nm.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Hailing Wang, Wenqi Wei, Jianhuan Wang, Qi Feng, Shiyao Wu, Huaixin Yang, Xiulai Xu, Ting Wang, Jianjun Zhang,