Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8148376 | Journal of Crystal Growth | 2018 | 16 Pages |
Abstract
In this work, we have investigated the growth of highly n-doped gallium arsenide (GaAs) and gallium indium phosphide (GaInP) with tellurium (Te) by metal organic vapor phase epitaxy (MOVPE) using diisopropyl telluride (DIPTe), aiming at fabricating high performances tunnel junctions. A parametric study is performed in order to optimize the n++-type doping. Concentrations above 2.7â¯Ãâ¯1019â¯cmâ3 were achieved in both GaAs and GaInP layers. Using these Te-doped layers, we fabricated both n on p (n/p) and p on n (p/n) tunnel junctions. The p/n tunnel junction required additional annealing steps during growth, due to memory effect and surfactant properties of Te. We characterized GaAs/GaAs, GaAs/AlGaAs and AlGaAs/GaInP tunnel junctions with peak tunneling current densities as high as 250, 3000 and 1500â¯A/cm2 respectively. These tunnel junction performances are suitable for multijunction solar cells operating under high concentration.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Gwenaëlle Hamon, Nicolas Paillet, José Alvarez, Alexandre Larrue, Jean Decobert,