The role of hydrogen in carbon incorporation and surface roughness of MOCVD-grown thin boron nitride

However, the main difference was brought to light by SIMS measurements. The SIMS measurements revealed that growth under an H2 flow leads to a reduction in carbon concentration by more than four orders of magnitude. It was also shown that the boron distribution in the BN film grown under an H2 flow is very uniform. It is discussed that this mechanism is related to the reactions between TEB and NH3 in the presence of H2. The elimination of carbon by using hydrogen reveals its role in BN growth, which is indeed essential.