Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8148386 | Journal of Crystal Growth | 2018 | 17 Pages |
Abstract
N-type 4H-SiC crystals were grown by the physical vapor transport (PVT) method with nitrogen and aluminum (N-Al) co-doping. By using aluminum carbide powder preannealed in nitrogen gas atmosphere as an aluminum doping source, we obtained highly N-Al co-doped crystals with a nitrogen concentration higher than that in nitrogen-only-doped crystals. The dislocation densities of N-Al co-doped crystals with a high aluminum concentration (>1â¯Ãâ¯1019â¯cmâ3) were found to become higher than those with a low aluminum concentration (<1â¯Ãâ¯1019â¯cmâ3). Moreover, we investigated the expansion velocities of double Shockley-type stacking faults (DSFs) in the N-Al co-doped and the nitrogen-only-doped crystals. We found that the DSF expansion velocities in the N-Al co-doped crystals were lower than those in the nitrogen-only-doped crystals. This difference in the DSF expansion velocity is discussed with respect to the quantum well action model.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
H. Suo, K. Eto, T. Ise, Y. Tokuda, H. Osawa, H. Tsuchida, T. Kato, H. Okumura,