Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8148559 | Journal of Crystal Growth | 2018 | 19 Pages |
Abstract
A 99.6% relaxed InSb layer is grown on a 6° offcut (1â¯0â¯0) Si substrate via an AlSb/GaSb buffer using molecular beam epitaxy (MBE). A 200â¯nm GaSb buffer is first grown on Si and the lattice mismatch between them is accommodated by an interfacial misfit (IMF) array consisting of uniformly distributed 90° misfit dislocations. Si delta doping is introduced during the growth of GaSb to reduce the density of threading dislocation. Subsequently, a 50â¯nm AlSb buffer is grown followed by a 0.8â¯Âµm InSb layer. The InSb layer exhibits a 300â¯K electron mobility of 22,300â¯cm2/Vs. An InSb photoconductor on Si is demonstrated with a photoconductive gain from 77â¯K to 200â¯K under a 700â¯Â°C maintained blackbody.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Bo Wen Jia, Kian Hua Tan, Wan Khai Loke, Satrio Wicaksono, Soon Fatt Yoon,