Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8148563 | Journal of Crystal Growth | 2018 | 6 Pages |
Abstract
Networks of vertically c-oriented prism shaped InN nanowalls, are grown on c-GaN/sapphire templates using a CVD technique, where pure indium and ammonia are used as metal and nitrogen precursors. A systematic study of the growth, structural and electronic properties of these samples shows a preferential growth of the islands along [112¯0] and [0â¯0â¯0â¯1] directions leading to the formation of such a network structure, where the vertically [0â¯0â¯0â¯1] oriented tapered walls are laterally align along one of the three [112¯0] directions. Inclined facets of these walls are identified as semipolar (112¯2)-planes of wurtzite InN. Onset of absorption for these samples is observed to be higher than the band gap of InN suggesting a high background carrier concentration in this material. Study of the valence band edge through XPS indicates the formation of positive depletion regions below the surface of the side facets [(112¯2)-planes] of the walls. This is in contrast with the observation for c-plane InN epilayers, where electron accumulation is often reported below the top surface.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
B.K. Barick, Rajendra Kumar Saroj, Nivedita Prasad, D.S. Sutar, S. Dhar,