Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8148567 | Journal of Crystal Growth | 2018 | 7 Pages |
Abstract
Et2BiTeEt was used as single source precursor for the deposition of Bi2Te3 thin films on Si(1â¯0â¯0) substrates by metal organic chemical vapor deposition (MOCVD) at very low substrate temperatures. Stoichiometric and crystalline Bi2Te3 films were grown at 230â¯Â°C, which is approximately 100â¯Â°C lower compared to conventional MOCVD processes using one metal organic precursors for each element. The Bi2Te3 films were characterized using scanning electron microscopy, high-resolution transmission electron microscopy and X-ray diffraction. The elemental composition of the films, which was determined by energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy, was found to be strongly dependent of the substrate temperature.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Georg Bendt, Sanae Gassa, Felix Rieger, Christian Jooss, Stephan Schulz,