Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8148633 | Journal of Crystal Growth | 2018 | 17 Pages |
Abstract
The high growth rate of epitaxial GaAs was investigated using a novel horizontal metalorganic vapor phase epitaxy (MOVPE) reactor, from the point of view of realizing low-cost photovoltaic (PV) solar cells. The GaAs growth rate exhibited an approximately linear relationship with the amount of trimethylgalium (TMGa) supplied, up to a rate of 90â¯Î¼m/h. The distribution of growth rate was observed for a two-inch wafer, along the flow direction, and the normalized profile of the distribution was found to be independent of the precursor input, from 20 to 70â¯Î¼m/h. These tendencies indicated that significant parasitic prereaction did not occur in the gaseous phase, for this range of growth rate. GaAs p-n single-junction solar cells were successfully fabricated at growth rates of 20, 60, and 80â¯Âµm/h. The conversion efficiency of the cell grown at 80â¯Âµm/h was comparable to that of the 20â¯Âµm/h cell, indicating the good quality and properties of GaAs. The epitaxial growth exhibited good uniformity, as evidenced by the uniformity of the cell performance across the wafer, from the center to the edge. The result indicated the potential of high-throughput MOVPE for low-cost production, not only for PV devices but also for other semiconductor applications.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Akinori Ubukata, Hassanet Sodabanlu, Kentaroh Watanabe, Shuichi Koseki, Yoshiki Yano, Toshiya Tabuchi, Takeyoshi Sugaya, Koh Matsumoto, Yoshiaki Nakano, Masakazu Sugiyama,