Rapid crystallization of amorphous silicon films utilizing Ar-H2 mesoplasma annealing

A rapid and low temperature crystallization of amorphous silicon (a-Si) films by Ar-H2 mesoplasma annealing is demonstrated. The high thermal kinetic energy of mesoplasma leads to the fast crystallization process and a nanocrystalline Si film with a high crystalline fraction can be obtained within a few seconds at a temperature less than 600 °C. The atomic H in mesoplasma environment with a high number density enhances the crystallization process through an H diffusion-induced chemical annealing apart from the thermal effect. The recrystallization process of a-Si film by mesoplasma annealing is demonstrated.