Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8148736 | Journal of Crystal Growth | 2018 | 22 Pages |
Abstract
PdS is theoretically proposed to novel topological material with eight-band fermions. Here, PdS1âδ crystals were successfully grown from KI as solvent by modified flux method. The single crystalline quality and compositional homogeneity of grown PdS1âδ are characterized by X-ray diffraction and energy dispersion spectroscopy. Temperature dependent electrical transport property of PdS1âδ demonstrates a semiconductor-like behavior. Analysis of temperature-dependent resistance indicates that there is variable-range-hopping behavior at low temperature. The clear negative MR of PdS1âδ single crystals is measured at the low temperature (<30â¯K), which may be ascribed to the interaction between conducting carriers and localized moments. however, the magneto-transport results have not shown the clues of topological feature of PdS.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Lin Cao, Yang-Yang Lv, Si-Si Chen, Xiao Li, Jian Zhou, Shu-Hua Yao, Y.B. Chen, Minghui Lu, Yan-Feng Chen,