Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8148743 | Journal of Crystal Growth | 2018 | 6 Pages |
Abstract
This paper presents the impact of temperature and nitrogen-composition on the growth mode and crystallinity of GaAsPN alloys. Reflection high-energy electron diffraction results combined with transmission electron microscopy analysis revealed that maintaining two-dimensional (2-D) growth required higher temperatures when nitrogen composition increased. Outside the 2-D growth windows, stacking faults and micro-twins were preferentially formed at {1â¯1â¯1} B planes rather than at the {1â¯1â¯1} A planes and anomalous growth was observed. The photoluminescence spectra of GaAsPN layers implies that the higher temperature growth is effective for reducing the nitrogen-related point defects.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Keisuke Yamane, Shun Mugikura, Shunsuke Tanaka, Masaya Goto, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara,