Crystal growth and temperature dependence of light output of Ce-doped (Gd, La, Y)2Si2O7 single crystals

Ce-doped (Gd, La)2Si2O7 scintillation crystals are expected to be used as gamma-ray detectors for high temperature measurement. To realize scintillators for high temperature environment, we investigated (Ce0.01 Gd0.59−x La0.40 Yx)2Si2O7 (x = 0.00, 0.05, 0.10, 0.15) single crystals grown by the micro-pulling-down method. The results showed that a 5% Y-admixed Ce-doped (Gd, La)2Si2O7 scintillator can yield higher light output when compared with Y-free Ce-doped (Gd, La)2Si2O7 scintillator. The light outputs at 25°C and 175°C were determined to be ∼43,000 and ∼40,000 photons/MeV, respectively. Moreover, 1 inch size 5% Y-admixed Ce-doped (Gd, La)2Si2O7 scintillator was grown by the Czochralski technique, and its light output at 175°C kept the value of around 95% of the value at 25°C.