Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8148798 | Journal of Crystal Growth | 2018 | 21 Pages |
Abstract
In this work, we report on the growth of pseudomorphic and highly doped InAs(Si)/GaSb(Si) heterostructures on p-type (0â¯0â¯1)-oriented GaSb substrate and the fabrication and characterization of n+/p+â¯Esaki tunneling diodes. We particularly study the influence of the Molecular Beam Epitaxy shutter sequences on the structural and electrical characteristics of InAs(Si)/GaSb(Si) Esaki diodes structures. We use real time Reflection High Electron Diffraction analysis to monitor different interface stoichiometry at the tunneling interface. With Atomic Force Microscopy, X-ray diffraction and Transmission Electron Microscopy analyses, we demonstrate that an “InSb-like” interface leads to a sharp and defect-free interface exhibiting high quality InAs(Si) crystal growth contrary to the “GaAs-like” one. We then prove by means of Secondary Ion Mass Spectroscopy profiles that Si-diffusion at the interface allows the growth of highly Si-doped InAs/GaSb diodes without any III-V material deterioration. Finally, simulations are conducted to explain our electrical results where a high Band to Band Tunneling (BTBT) peak current density of Jpâ¯=â¯8â¯mA/μm2 is achieved.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
S. El Kazzi, A. Alian, B. Hsu, A.S. Verhulst, A. Walke, P. Favia, B. Douhard, W. Lu, J.A. del Alamo, N. Collaert, C. Merckling,