Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8148860 | Journal of Crystal Growth | 2018 | 5 Pages |
Abstract
MgZnO films and ZnO/Mg0.19Zn0.81O single quantum well (QW) structures with well layer thickness from 1 to 4â¯nm were directly prepared on sapphire substrates at the low substrate temperature of 400â¯Â°C by pulsed laser deposition (PLD). The photoluminescence (PL) peak of QW shifted from 3.51 to 3.33â¯eV at room temperature as the well thickness was increased from 2 to 4â¯nm. The PL peak position of QW with well thickness of 2â¯nm can be well explained by Varshni's relation and the best fitting to the data were E(0)â¯=â¯3.558â¯eV, αâ¯=â¯2.17â¯Ãâ¯10â4â¯eV/K, and β =â¯589â¯K. No S-shape variation of PL peak position with temperature for this QW indicates low-temperature growth is an ideal candidate for eliminating the stain effect in ZnO QW.
Keywords
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Xu Wang, Zhengwei Chen, Congyu Hu, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo,