Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8148884 | Journal of Crystal Growth | 2018 | 7 Pages |
Abstract
The PV properties of wafers processed from Cz-seeded directionally solidified silicon ingots suffer from variable structural defects. In this study, we draw an overview on the types of structural defects encountered in the specific case of full ã1â¯0â¯0ã oriented growth. We found micro twins, background dislocations, and subgrains boundaries. We discuss the possible links between thermomechanical stresses and growth processes with spatial evolution of both background dislocation densities and subgrain boundaries length.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
A. Lantreibecq, M. Legros, N. Plassat, J.P. Monchoux, E. Pihan,