Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8148927 | Journal of Crystal Growth | 2018 | 5 Pages |
Abstract
The effects of rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs multiple quantum wells (MQWs) grown by chemical beam epitaxy (CBE) are studied by photoluminescence (PL) at 77â¯K. The results show that the optical quality of the MQWs improves significantly after RTA. With increasing RTA temperature, PL peak energy of the MQWs redshifts below 1023â¯K, while it blueshifts above 1023â¯K. Two competitive processes which occur simultaneously during RTA result in redshift at low temperature and blueshift at high temperature. It is also found that PL peak energy shift can be explained neither by nitrogen diffusion out of quantum wells nor by nitrogen reorganization inside quantum wells. PL peak energy shift can be quantitatively explained by a modified recombination coupling model in which redshift nonradiative recombination and blueshift nonradiative recombination coexist. The results obtained have significant implication on the growth and RTA of GaNAs material for high performance optoelectronic device application.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Yijun Sun, Zhiyuan Cheng, Qiang Zhou, Ying Sun, Jiabao Sun, Yanhua Liu, Meifang Wang, Zhen Cao, Zhi Ye, Mingsheng Xu, Yong Ding, Peng Chen, Michael Heuken, Takashi Egawa,