Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8148991 | Journal of Crystal Growth | 2018 | 5 Pages |
Abstract
Doping of Ga(Al)N layers by plasma-assisted molecular beam epitaxy in Ga-rich conditions on c-plane bulk GaN substrates was studied. Ga(Al)N samples, doped with Mg or Si, grown using different growth conditions were compared. In contrast to Si doped layers, no change in the Mg concentration was observed for layers grown using different growth rates for a constant Mg flux and constant growth temperature. This effect enables the growth of Ga(Al)N:Mg layers at higher growth rates, leading to shorter growth time and lower residual background doping, without the need of increasing Mg flux. Enhancement of Mg incorporation for Al containing layers was also observed. Change of Al content from 0% to 17% resulted in more than two times higher Mg concentration.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Henryk Turski, Grzegorz MuzioÅ, Marcin Siekacz, Pawel Wolny, Krzesimir Szkudlarek, Anna Feduniewicz-Å»muda, Krzysztof Dybko, Czeslaw Skierbiszewski,