Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8149262 | Journal of Crystal Growth | 2016 | 9 Pages |
Abstract
Fluid flow, heat transfer, and species transport with chemical reactions have been investigated for gallium nitride (GaN) growth in a commercial metal-organic chemical vapor deposition (MOCVD) reactor. Both the growth rate and the growth uniformity are investigated zone by zone, as the wafers are divided into three zones/groups according to their distances to the susceptor center. The results show that species transport in the reactor is affected by the inlet conditions, i.e., the premixed or non-premixed inlet, the inlet temperature, the total gas flow rate, and the V/III component ratio, and reveal that the premixed inlet condition is preferred for uniform growth. Especially, a large total flow rate or a low V/III ratio results in both increase of the growth rate and improvement of the growth uniformity.
Related Topics
Physical Sciences and Engineering
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Condensed Matter Physics
Authors
Zhi Zhang, Haisheng Fang, Qingxia Yao, Han Yan, Zhiyin Gan,