Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8149303 | Journal of Crystal Growth | 2016 | 12 Pages |
Abstract
We present a novel method for germanium doping of gallium nitride by in-situ chlorination of solid germanium during the hydride vapour phase epitaxy (HVPE) process. Solid germanium pieces were placed in the doping line with a hydrogen chloride flow directed over them. We deduce a chlorination reaction taking place at 800°C, which leads to germanium chloroform (GeHCl3) or germanium tetrachloride (GeCl4). The reactor shows a germanium rich residue after in-situ chlorination experiments, which can be removed by hydrogen chloride etching. All gallium nitride crystals exhibit n-type conductivity, which shows the validity of the in-situ chlorination of germanium for doping. A complex doping profile is found for each crystal, which was assigned to a combination of localised supply of the dopant and sample rotation during growth and switch-off effects of the HVPE reactor.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Patrick Hofmann, Martin Krupinski, Frank Habel, Gunnar Leibiger, Berndt Weinert, Stefan Eichler, Thomas Mikolajick,