Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8149547 | Journal of Crystal Growth | 2015 | 4 Pages |
Abstract
The properties of the acceptor states in GaAsN grown by chemical beam epitaxy (CBE) are studied by analyzing their charges based on the Poole-Frenkel model. Deep level transient spectroscopy (DLTS) shows two acceptor levels at 0.11 and 0.19 eV above the valence band maximum. The emission rates of carriers from these states are enhanced with increasing the electric field during the DLTS measurement, which indicates that the energies required for the emission are decreased. By analyzing this field-enhanced emission process, the polarizabilities of the levels at 0.11 and 0.19 eV are found to be â1 (±0.1) and â2 (±0.1), respectively. In addition, these states have almost the same concentration. Therefore, we conclude that they originate from the same defect, acting as a double acceptor in GaAsN film grown by CBE.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Omar Elleuch, Li Wang, Kan-Hua Lee, Kazuma Ikeda, Nobuaki Kojima, Yoshio Ohshita, Masafumi Yamaguchi,