| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8149549 | Journal of Crystal Growth | 2015 | 24 Pages |
Abstract
Optical characterization reveals changes in the defect distribution in the GaAs samples. The changes of the recombination processes, caused by In and P, depend on the indium vs. phosphorus ratio. The effective Zn diffusion rate is controlled by this ratio.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
L.B. Karlina, A.S. Vlasov, B.Y. Ber, D.Y. Kazantsev,